Gallium Arsenide (GaAs) Si-doped Wafer 2” 3” 4” at Western Minmetals (SC) Corporation

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Product
Gallium Arsenide (GaAs) Si-doped Wafer 2” 3” 4” at Western Minmetals (...
Posting date : Dec 27, 2017
Membership
Free Member Scince Dec 26, 2017
FOB Price
1-500USD/pc
Min. Order Quantity
250pcs
Supply Abillity
10000-15000pcs/month
Port
China
Payment Terms
TT in advance
Package
in single wafer container, carton box outside
Keyword :
Category
Contact
Tony Fu
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Product Detail
Company Info
 
Quick Detail
Place of Origin
China [CN]
Brand Name
WMC
HS-CODE
8541-90
Package & Delivery Lead Time
Package
in single wafer container, carton box outside
Detailed Description
Gallium Arsenide (GaAs) Si-doped Wafer 2” 3” 4” at Western Minmetals (SC) Corporation
Diameter: 50.8+/- 0.2, 76.2+/-0.3, 100+/-0.3 mm
Dopant: Silicon
Conduct Type: SC/N
Growth Method: VGF
Thickness: 220-350+/-20 um
Crystal Orientation: <100>+/-0.5degree
Orientation Flat / Length: 16+/-1, 22+/-1, 32+/-1 mm
Identification Flat / Length: 8+/-1mm, 11+/-1, 18+/-2 mm
Orientation / Identification Flat Option: EJ, US or Notch
Carrier Concentration: (0.3-1.0)E18 or (0.4-4.0)E18 /cm3
Resistivity: (0.8-9.0)E(-3) or 1E(-2) - 1E(-3) Ohm.cm
Hall Mobility: 1,500-3,000 cm2/v.s
EPD: 5,000 /cm2 max
Particle Count: <50 (size>0.3um, count/wafer)
TTV/Bow/Warp: 10um max
Laser Mark: Upon backside or as required
Front / Backside Finish: P/P P/E
Product Packing: Aluminium Composite
Transportation Packing: wafer container, carton box outside
Application: extensively used for LED or LD applications, as well as optoelectronic, microelectronic industry

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